• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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    • 专利摘要:
    "SOLAR CELLS LEAF-BASED METALIZATION". The present invention describes approaches to sheet-based metallization of solar cells and the resulting solar cells. In one example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions are disposed within or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metallic seed material regions that provide a region of metallic seed particle material disposed in each. of alternating N-type and P-type semiconductor regions. A metallic sheet is disposed in the plurality of regions of metallic starting particle material, the metallic sheet having anodized portions that isolate the metallic regions of the metallic sheet corresponding to the alternating N-type semiconductor regions and type P.
    公开号:BR112016022522A2
    申请号:R112016022522-8
    申请日:2015-03-24
    公开日:2021-05-18
    发明作者:Gabriel Harley；Kim Taeseok；Richard Hamilton SEWELL；Michael MORSE；David D. Smith；Matthieu Moors；Jens-Dirk Moschner
    申请人:Sunpower Corporation；Total Marketing Services；
    IPC主号:
    专利说明:

    [0001] [0001] The embodiments of the present disclosure lie in the field of renewable energy and, in particular, include approaches to sheet-based metallization of solar cells and the resulting solar cells. BACKGROUND OF THE INVENTION
    [0002] [0002] Photovoltaic cells, commonly known as solar cells, are well-known devices for the direct conversion of solar radiation into electrical energy. In general, solar cells are fabricated on a wafer or semiconductor substrate using semiconductor processing techniques to form a p-n junction close to a substrate surface. Solar radiation that falls on the surface of the substrate and penetrates into its interior creates electron-hole pairs (empty spaces without electrons) in the volume of the substrate. The electron-hole pairs migrate to the p-doping and n-doping regions in the substrate, thus generating a voltage differential between the doped regions. The doped regions are connected to conductive regions in the solar cell to direct an electrical current from the cell to an external circuit coupled to it.
    [0003] [0003] Efficiency is an important characteristic of a solar cell, as it is directly related to the capacity of the solar cell to generate energy. Likewise, the efficiency in the production of solar cells is directly related to the cost-effectiveness of such solar cells. Consequently, techniques to increase the efficiency of solar cells, or techniques to increase the efficiency of manufacturing solar cells, are generally desirable. Certain embodiments of the present disclosure allow for greater efficiency in solar cell fabrication by providing innovative processes for fabrication of solar cell structures. Some embodiments of the present disclosure enable more efficient solar cells by providing innovative solar cell structures.
    [0004] [0004] Figures 1A to 1E illustrate cross-sectional views of various stages in the manufacture of a solar cell using sheet-based metallization, according to an embodiment of the present disclosure, as follows:
    [0005] [0005] Figure 1A illustrates a stage in the fabrication of a solar cell after the formation of optional regions of metallic initial particle in emitting regions formed above a portion of a back surface of a substrate of a solar cell;
    [0006] [0006] Figure 1B illustrates the structure of Figure 1A after the optional formation of a protective layer;
    [0007] [0007] Figure 1C illustrates the structure of Figure 1B after adhering a metal sheet to a back surface thereof;
    [0008] [0008] Figure 1D illustrates the structure of Figure 1C after the formation of laser grooves in the metal sheet; and
    [0009] [0009] Figure 1E illustrates the structure of Figure 1D after anodizing the exposed surfaces of the metallic sheet.
    [0010] [0010] Figure 2 is a flowchart that lists operations in a method of manufacturing a solar cell, corresponding to Figures 1A to 1E, according to an embodiment of the present disclosure.
    [0011] [0011] Figures 3A to 3C illustrate cross-sectional views of various stages in the manufacture of a solar cell with the use of sheet-based metallization, according to another modality of the present disclosure, as follows:
    [0012] [0012] Figure 3A illustrates a stage in the fabrication of a solar cell that involves placing an anodized metallic sheet above optional metallic seed particle regions formed in the emitting regions formed above a portion of a back surface of a substrate of a solar cell;
    [0013] [0013] Figure 3B illustrates the structure of Figure 3A after welding the anodized metal sheet to a rear surface thereof; and 107/154
    [0014] [0014] Figure 3C illustrates the structure of Figure 3B after the formation of laser grooves in the anodized metal sheet.
    [0015] [0015] Figure 4 is a flowchart listing operations in a method of manufacturing a solar cell, corresponding to Figures 3A to 3C, according to an embodiment of the present disclosure.
    [0016] [0016] Figure 5 illustrates cross-sectional views of various stages in the manufacture of a solar cell with the use of sheet-based metallization, according to another embodiment of the present disclosure.
    [0017] [0017] Figure 6A illustrates a cross-sectional view of a portion of a solar cell having sheet-based contact structures formed in the emitting regions formed in a substrate, in accordance with an embodiment of the present disclosure.
    [0018] [0018] Figure 6B illustrates a cross-sectional view of a portion of a solar cell having anodized sheet-based contact structures formed in the emitting regions formed in a substrate, in accordance with an embodiment of the present disclosure. DETAILED DESCRIPTION
    [0019] [0019] The following detailed description is merely illustrative in nature and is not intended to limit the modalities of the matter in question or the application and uses of such modalities. As used herein, the term "exemplifier" means "to serve as an example, case or illustration". Any implementation described herein as exemplary should not necessarily be regarded as preferred or advantageous over other implementations. Furthermore, it is not intended to be bound by any express or implied theory presented in the aforementioned technical field, background, summary, or the detailed description below.
    [0020] [0020] This descriptive report includes references to "a modality", regardless of whether the word "an" represents a numeral or an article. The use of the phrase "in a modality", regardless of whether the word "an" 108/154 represents a numeral or an article, does not necessarily refer to the same modality. Specific features, structures, or characteristics may be combined in any suitable manner consistent with this description.
    [0021] [0021] Terminology. The following paragraphs provide definitions and/or context for terms found in this disclosure (including the appended claims):
    [0022] [0022] "Understanding". The term is broad. As used in the appended claims, this term does not exclude additional structure or steps.
    [0023] [0023] "Configured for". Various units or components may be described or claimed to be "configured to" perform a task or tasks. In such contexts, "configured for" is used to connote structure by indicating that the units/components include a structure that performs that task or tasks while functioning. As such, it can be said that the unit/component is configured to perform the task even when the specified unit/component is not currently in an operational state (for example, not turned on/active (O)). The mention that a unit/circuit/component is "configured to" perform one or more tasks is expressly intended not to invoke 35 U.S.C. §112, sixth paragraph, for that unit/component.
    [0024] [0024] "First", "Second" etc. As used here, these terms are used as markers for nouns they precede, and do not imply any sort of ordering (eg, spatial, temporal, logic, etc.). For example, the reference to a "first" solar cell does not necessarily imply that that solar cell is the first solar cell in a sequence; instead, the term "first" is used to differentiate this solar cell from another solar cell (eg, a "second" solar cell).
    [0025] [0025] "Coupled" - The following description refers to elements or nodes or features that are "coupled" with each other. As used herein, unless expressly stated otherwise, "coupled" means that a 109/154 element/node/resource is directly or indirectly linked to (or directly or indirectly communicates with) another element/node/resource, and not necessarily in a mechanical way.
    [0026] [0026] Furthermore, certain terminology may also be used in the following description for reference purposes only, and as such is not intended to be limiting. For example, terms such as "top", "bottom", "above", and "below" refer to directions in the drawings to which reference is made. Terms such as "front", "rear", "rear", "lateral", "away from center" and "near center" describe the orientation and/or location of portions of the component within a consistent frame of reference, however arbitrary, which is made clear by reference to the text and associated drawings that describe the component under discussion. Such terminology may include the words specifically mentioned above, derivatives thereof, and words of similar importance.
    [0027] [0027] Approaches to sheet-based metallization of solar cells and the resulting solar cells are described in this document. In the following description, various specific details, such as specific operations of the processing flow, are provided in order to provide a complete understanding of the modalities of the present disclosure. It will be apparent to the person skilled in the art that the modalities of the present disclosure can be practiced without these specific details. In other instances, well-known fabrication techniques, such as lithography and patterning techniques, will not be described in detail in order not to unnecessarily obscure the modalities of the present disclosure. Furthermore, it should be understood that the various modalities shown in the figures are illustrative representations and are not necessarily drawn to scale.
    [0028] [0028] Methods for manufacturing solar cells are described here. In one embodiment, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions within or above a substrate. The method also involves adhering a foil to the alternating N-type and P-type semiconductor regions 110/154. The method also involves laser ablation through only a portion of the foil at regions corresponding to points between the alternating N-type semiconductor regions. and P-type. The method also involves, subsequent to laser ablation, remaining foil anodizing to isolate the remaining foil regions corresponding to the alternating N-type and P-type semiconductor regions.
    [0029] [0029] In another embodiment, a method of manufacturing a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions within or above a substrate. The method also involves adhering an anodized sheet metal to the alternating N-type and P-type semiconductor regions, the anodized sheet metal having a top anodized surface and a bottom anodized surface with a metal portion in between. Adhesion of the anodized sheet metal to the alternating N-type and P-type semiconductor regions involves penetration through the bottom anodized surface regions of the anodized sheet metal. The method also involves laser ablation through the top anodized surface and the metallic portion of the anodized sheet metal in regions that correspond to points between the alternating N-type and P-type semiconductor regions. Laser ablation ends at the bottom anodized surface of the anodized sheet metal isolating the remaining sheet metal regions that correspond to the alternating type N and type P semiconductor regions.
    [0030] [0030] Solar cells are also described here. In one embodiment, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions are disposed within or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metallic seed material regions providing a region of metallic seed particle material disposed in each of the 111/154 alternating N-type and P-type semiconductor regions. A metallic sheet is disposed in the plurality of regions of metallic starting particle material, the metallic sheet having anodized portions that isolate the metallic regions of the metallic sheet corresponding to the alternating semiconductor regions type N and type P.
    [0031] [0031] One or more modalities described here are directed to metallization based on metallic anodizing (such as aluminum) for solar cells. In one embodiment, an aluminum metallization process for interdigitated back contact (CTI) solar cells is disclosed. In one embodiment, an anodizing and subsequent laser grooving approach is revealed.
    [0032] [0032] In a first aspect, a laser grooving and subsequent anodizing approach provides an innovative electrode standardization method for CTI solar cells based on laser standardization and anodizing of an aluminum (Al) sheet (which has been welded to laser to the cell) to form an interdigitated pattern of contact fingers. The modalities of the first approach can be implemented to provide a damage-free method for patterning an Al sheet on the insert, avoiding complex alignment and/or masking processes.
    [0033] [0033] Consistent with the above-mentioned first aspect, Figures 1A to 1E illustrate cross-sectional views of various stages in the manufacture of a solar cell using sheet-based metallization, in accordance with an embodiment of the present disclosure. Figure 2 is a flowchart listing operations in a method of manufacturing a solar cell corresponding to Figures 1A to 1E, in accordance with an embodiment of the present disclosure.
    [0034] [0034] Figure 1A illustrates a stage in solar cell fabrication after the formation of optional metallic initial particle regions on the emitting regions formed above a portion of a back surface of a substrate of a solar cell. Referring to Figure 1A and corresponding 112/154 operation 202 of flowchart 200, a plurality of alternating N-type and P-type semiconductor regions are formed above a substrate. In particular, a substrate 100 is disposed above the N-type semiconductor regions 104 and the P-type semiconductor regions 106, positioned in a thin dielectric material 102 as a material interposed between the N-type semiconductor regions 104 or the P-type semiconductor regions 106, respectively. , and substrate 100. Substrate 100 has a light receiving surface 101 opposite a back surface above which N-type semiconductor regions 104 and P-type semiconductor regions 106 are formed.
    [0035] [0035] In one embodiment, substrate 100 is a monocrystalline silicon substrate, such as a bulky simple N-type doping crystalline silicon substrate. However, it should be considered that substrate 100 can be a layer, such as a multicrystalline silicon layer, disposed on a global solar cell substrate. In one embodiment, the thin dielectric layer 102 is a tunnel-acting silicon oxide layer that is approximately 2 nanometers thick or less. In such an embodiment, the term "tunnel dielectric layer" refers to a very thin dielectric layer through which electrical conduction can be achieved. Conduction may be due to quantum tunneling and/or the presence of small regions of direct physical connection through fine points in the dielectric layer. In one embodiment, the tunnel-effect dielectric layer is, or includes, a thin layer of silicon oxide.
    [0036] [0036] In one embodiment, the alternating N-type and P-type semiconductor regions 104 and 106, respectively, formed of polycrystalline silicon, are formed using, for example, a plasma-enhanced chemical vapor deposition process (PECVD, plasma-enhanced chemical vapor deposition). In such an embodiment, the N-type polycrystalline silicon emitting regions 104 are doped with an N-type impurity such as phosphorus. P-type polycrystalline silicon emitting regions 106 are doped with a P-type impurity such as boron.
    [0037] [0037] In one embodiment, the light-receiving surface 101 is a textured light-receiving surface as depicted in Figure 1A. In one embodiment, a hydroxide-based wet corrosive is employed to texture the light-receiving surface 101 of substrate 100 and possibly the trench surfaces 108, as is also depicted in Figure 1A. It should be noted that the timing of texturing the light-receiving surface may vary. For example, texturing can be performed before or after the formation of thin dielectric layer 102. In one embodiment, a textured surface can be one that has a regular or irregular shaped surface to scatter incident light, decreasing the amount of reflected light outside the light-receiving surface 101 of the solar cell. Again, referring to Figure 1A, additional modalities may include the formation of passivation and/or anti-reflective coating (ARC) layers (shown collectively as layer 112) on the light-receiving surface 101. One should consider that the timing of the formation of passivation and/or ARC layers may also vary.
    [0038] [0038] Again, referring to Figure 1A and now corresponding optional operation 204 of flowchart 200, a plurality of metallic seed material regions 114 is formed to provide a metallic seed material region in each of the semiconductor regions alternating type N and type P 104 and 106, respectively. The regions of metallic initial particle material 114/154 114 make direct contact with the alternating type N and type P semiconductor regions 104 and 106.
    [0039] [0039] In one embodiment, the metallic initial particle regions 114 are aluminum regions. In such an embodiment, each of the aluminum regions has a thickness of approximately in the range of 0.3 to 20 microns and includes aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%. In other embodiments, metallic starting particle regions 114 include a metal such as, but not limited to, nickel, silver, cobalt, or tungsten.
    [0040] [0040] Figure 1B illustrates the structure of Figure 1A after the optional formation of a protective layer. In particular, with reference to Figure 1B, an insulating layer 116 is formed in the plurality of regions of metallic starting particle material 114. In one embodiment, the insulating layer 116 is a silicon nitride of the silicon oxide-nitride material layer. .
    [0041] [0041] Figure 1C illustrates the structure of Figure 1B after adhering a metal sheet to a back surface thereof. Referring to Figure 1C and corresponding operation 206 of flowchart 200, a metallic sheet 118 is adhered to the alternating N-type and P-type semiconductor regions through direct coupling of the portions of the metallic sheet 118 with a corresponding portion of each of the material regions of metallic initial particle
    [0042] [0042] In one embodiment, the metallic sheet 118 is an aluminum (Al) sheet having a thickness approximately in the range of 5-100 microns and preferably a thickness approximately in the range of 50-100 microns. In one embodiment, the Al sheet is an aluminum alloy sheet including aluminum and a second element such as, but not limited to, copper, manganese, silicon, magnesium, zinc, tin, lithium, or combinations thereof. In one embodiment, the Al sheet is a temper grade sheet such as, but not limited to, grade F (as manufactured), grade O (full softness), grade H (hardened by deformation), or grade T (treated by heat).
    [0043] [0043] In one embodiment, the metallic sheet 118 is directly adhered to the plurality of regions of metallic initial particle material 114 using a technique such as, but not limited to, a laser welding process, a compression process thermal or an ultrasonic consolidation process. In one embodiment, the optional insulating layer 116 is included, and adhering the metallic sheet 118 to the plurality of regions of metallic starting particle material 114 involves penetration into the regions of the insulating layer 116, as depicted in Figure 1C.
    [0044] [0044] It should be considered that, according to another modality, an approach without initial particles can be implemented. In such an approach, the metallic starting particle material regions 114 are not formed, and the metallic sheet 118 is directly adhered to the material of the alternating N-type and P-type semiconductor regions 104 and 106. For example, in one embodiment, the sheet metallic 118 is directly adhered to the alternating N-type and P-type polycrystalline silicon regions.
    [0045] [0045] Figure 1D illustrates the structure of Figure 1C after the formation of laser grooves in the metal sheet. Referring to Figure 1D and corresponding operation 208 of flowchart 200, foil 118 is laser ablated through only a portion of foil 118 at regions corresponding to the points between alternating semiconductor regions 116/154 type N and type P 104 and 106, for example, above ditch locations 108 as depicted in Figure 1D. Laser ablation forms grooves 122 that extend partially, but not completely, into the foil.
    [0046] [0046] In one embodiment, the formation of laser grooves 122 involves laser ablation of a thickness of foil 118 approximately in the range of 80-99% of an entire thickness of foil 118. That is, in one embodiment, it is It is critical that the lower portion of the foil 118 is not penetrated so that the foil 118 protects the underlying emitter structures.
    [0047] [0047] In one embodiment, laser ablation is performed mask-free; however, in other embodiments, a mask layer is formed on a portion of foil 118 prior to laser ablation, and is removed subsequent to laser ablation. In such an embodiment, the mask is formed either over a portion or the entire area of the sheet. In another embodiment, the mask is then left in place during the anodizing process described below. In one modality, the mask is not removed at the end of the process. In another modality, however, the mask is not removed at the end of the process and is retained as a protective layer.
    [0048] [0048] Figure 1E illustrates the structure of Figure 1D after anodizing the exposed surfaces of the metal sheet. Referring to Figure 1E and corresponding operation 210 of flowchart 200, the remaining foil 118 is anodized on the exposed surfaces thereof to isolate the remaining foil regions 118 corresponding to the alternating N-type and P-type semiconductor regions 104 and 106. In particular, the exposed surfaces of the foil 118, including the surfaces of the grooves 122, are anodized to form an oxide coating 124. At points 126 corresponding to the alternating N-type and P-type semiconductor regions 104 and 106, for example, in the grooves 122 at the points above the trenches 108, the entire remaining thickness of the 117/154 foil 118 is anodized to isolate the remaining foil regions 118 above each of the N-type and P-type semiconductor regions 104 and 106.
    [0049] [0049] In one embodiment, the foil 118 is an aluminum foil and the anodizing of the foil involves forming aluminum oxide in the exposed and outermost portions of the remaining portions of the foil 118. In one such embodiment, anodizing the foil Aluminum involves oxidizing the exposed surfaces of the aluminum sheet to a depth approximately in the range of 1-20 microns, and preferably to a depth approximately in the range of 5-20 microns. In one embodiment, in order to electrically isolate the foil contact portion 118, the foil portions 118 at the bottom of the laser grooves 122 are completely anodized, as shown in Figure 1E. In one embodiment, apertures 128 may be made in portions of the oxide coating 124, as is also shown in Figure 1E, to enable contact with certain regions of foil 118.
    [0050] [0050] Again with reference to Figure 1E, in another embodiment, instead of anodizing the sheet metal to isolate portions of the sheet metal, the patterned sheet metal is etched with strong water to isolate portions of the sheet metal. In such an embodiment, the structure of Figure 1D is exposed to a wet corrosive. Although wet corrosive engraves all exposed portions of the sheet metal, a carefully timed strong water etching process is used to penetrate the bottoms of the laser grooves 122 without significantly reducing the thickness of the ungrooved regions of the sheet metal. In a particular embodiment, a hydroxide-based corrosive is used, such as, but not limited to, potassium hydroxide (KOH, potassium hydroxide) or tetramethyl ammonium hydroxide (TMAH).
    [0051] [0051] In a second aspect, a subsequent anodizing and laser groove forming approach involves the implantation of anodized sheets with the 118/154 using anodized aluminum oxide (OAA) as a laser contact zone. The contact zone is then retained to provide electrical insulation in the final solar cell.
    [0052] [0052] Consistent with the second aspect mentioned above, Figures 3A to 3C illustrate cross-sectional views of various stages in the manufacture of a solar cell using sheet-based metallization, according to another embodiment of the present disclosure. Figure 4 is a flowchart listing operations in a method of manufacturing a solar cell corresponding to Figures 3A to 3C in accordance with an embodiment of the present disclosure.
    [0053] [0053] Figure 3A illustrates a stage in the fabrication of a solar cell that involves placing an anodized metallic sheet above optional metallic seed particle regions formed in the emitting regions formed above a portion of a back surface of a substrate of a solar cell. Referring to Figure 3A and corresponding operation 402 of flowchart 400, a plurality of alternating N-type and P-type semiconductor regions are formed above a substrate. In particular, a substrate 300 is disposed above the N-type semiconductor regions 304 and the P-type semiconductor regions 306, positioned on a thin dielectric material 302 as a material interposed between the N-type 304 semiconductor regions or the P-type semiconductor regions 306, respectively , and substrate 300. Substrate 300 has a light receiving surface 301 opposite a back surface above which N-type semiconductor regions 304 and P-type semiconductor regions 306 are formed.
    [0054] [0054] In one embodiment, substrate 300 is a monocrystalline silicon substrate, such as a bulky simple N-type doping crystalline silicon substrate. However, it should be considered that substrate 300 can be a layer, such as a multicrystalline silicon layer, disposed on a global solar cell substrate. In one embodiment, the thin dielectric layer 302 is a tunnel-acting silicon oxide layer that is approximately 2 nanometers thick or less. In such a modality, the term 119/154
    [0055] [0055] In one embodiment, the alternating N-type and P-type semiconductor regions 304 and 306, respectively, formed from polycrystalline silicon, are formed using, for example, a plasma-enhanced chemical vapor deposition process (PECVD, plasma-enhanced chemical vapor deposition). In such an embodiment, the 304 N-type polycrystalline silicon emitting regions are doped with an N-type impurity such as phosphorus. P-type polycrystalline silicon emitting regions 306 are doped with a P-type impurity such as boron. As shown in Figure 3A, the alternating N-type and P-type semiconductor regions 304 and 306 may have trenches 308 formed therebetween, with trenches 308 extending partially into substrate 300.
    [0056] [0056] In one embodiment, the light-receiving surface 301 is a textured light-receiving surface, as depicted in Figure 3A. In one embodiment, a hydroxide-based wet corrosive is employed to texture the light-receiving surface 301 of substrate 300 and possibly the trench surfaces 308, as is also depicted in Figure 3A. It should be noted that the timing of texturing the light-receiving surface may vary. For example, texturing can be performed before or after the formation of thin dielectric layer 302. In one embodiment, a textured surface can be one that has a regular or irregular shaped surface to scatter incident light, decreasing the amount of reflected light outside the light-receiving surface 301 of the solar cell. Again, referring to Figure 3A, additional embodiments may include forming passivation and/or anti-reflective coating (ARC) layers (shown collectively as layer 312) on the light-receiving surface 301. It should be considered that the timing of the formation of passivation and/or ARC layers may also vary.
    [0057] [0057] Again, referring to Figure 3A and now the corresponding optional operation 404 of flowchart 400, a plurality of metallic seed material regions 314 is formed to provide a metallic seed material region in each of the semiconductor regions alternating type N and type P 304 and 306, respectively. Metallic seed material regions 314 make direct contact with alternating N-type and P-type semiconductor regions 304 and 306.
    [0058] [0058] In one embodiment, the metallic initial particle regions 314 are aluminum regions. In such an embodiment, each of the aluminum regions has a thickness of approximately in the range of 0.3 to 20 microns and includes aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%. In other embodiments, metallic starting particle regions 314 include a metal such as, but not limited to, nickel, silver, cobalt, or tungsten.
    [0059] [0059] Again, referring to Figure 3A, an anodized metal sheet 318 is positioned above the metal starting particle regions 314. In one embodiment, the anodized metal sheet 318 is an anodized aluminum sheet having a coating 319 of aluminum oxide. aluminum formed on it. In such an embodiment, the anodized aluminum sheet 318 has a total thickness approximately in the range of 5-100 microns, and preferably in the range of 50-100 microns, with the top anodized surface 319A and the bottom anodized surface 319B being that each contribute a thickness approximately in the range of 1-20 microns and preferably in the range of 5-20 microns. Thus, in one embodiment, anodized metal sheet 318 has an anodized top surface (coating 319A) and an anodized bottom surface (coating 319B) with a conductive metal portion therebetween. In one embodiment, anodized metal sheet 318 is an anodized aluminum alloy sheet including aluminum and a second element such as, but not limited to, copper, manganese, silicon, magnesium, zinc, tin, lithium, or combinations thereof. In one embodiment, anodized metal sheet 318 is a hardened grade anodized aluminum sheet such as, but not limited to, grade F (as manufactured), grade O (total softness), grade H (strain hardened), or grade T (heat treated).
    [0060] [0060] Figure 3B illustrates the structure of Figure 3A after welding the anodized metal sheet to a back surface thereof. With reference to Figure 3B and the corresponding operation 406 of flowchart 400, anodized metal sheet 318 is adhered to alternate N-type and P-type semiconductor regions 304 and 306 by direct coupling to portions of anodized metal sheet 318 with a corresponding portion of each of the metallic seed material regions 314. In such an embodiment, direct coupling the portions of the anodized metallic sheet 318 with a corresponding portion of each of the metallic seed material regions 314 involves forming a metallic solder 320 in each. such points, as depicted in Figure 3B. In a particular embodiment, the anodized metallic sheet 318 is spread on the back surface with a vacuum system and laser welded to the metallic initial particle layer which follows an array of weld points.
    [0061] [0061] In one embodiment, the anodized metal sheet 318 is adhered to the plurality of regions of metallic starting particle material 314 using a technique such as, but not limited to, a laser welding process, a compression process thermal or an ultrasonic consolidation process. In one embodiment, adhering anodized metallic sheet 318 to the plurality of regions of metallic starting particle material 314 involves penetration through the oxide coating of bottom surface 319B, as depicted in Figure 3B.
    [0062] [0062] In one embodiment (not shown, but similar to the description in Figure 1B), prior to adhering the anodized metallic sheet 318 to the plurality of regions of metallic starting particle material 314, an insulating layer is formed in the plurality of regions of material of metallic starting particle 314. In this embodiment, adhering the anodized metal sheet 314 to the plurality of regions of metallic starting particle material 314 involves penetration through the interposed regions of the insulating layer.
    [0063] [0063] It should be considered that, according to another modality, an approach without initial particles can be implemented. In such an approach, the metallic starting particle material regions 314 are not formed, and the anodized metallic sheet 318 is directly adhered to the material of the alternating N-type and P-type semiconductor regions 304 and 306. For example, in one embodiment, the Anodized metal sheet 318 is directly adhered to the alternating N-type and P-type polycrystalline silicon regions. In one such embodiment, the process involves penetrating through the oxide coating of the bottom surface 319B.
    [0064] [0064] Figure 3C illustrates the structure of Figure 3B after the formation of laser grooves in the anodized metal sheet. Referring to Figure 3C and corresponding operation 408 of flowchart 400, anodized metal sheet 318 is laser ablated through top anodized surface 319A and the central metal portion of anodized metal sheet 318 at regions corresponding to the points between the alternating N-type and P-type semiconductor regions 304 and 306, for example, above trench sites 308, as depicted in Figure 3C. Laser ablation terminates at the bottom anodized surface 319B of anodized foil 318, isolating the remaining foil regions 318 that correspond to the alternating N-type and P-type semiconductor regions.
    [0065] [0065] As such, laser ablation forms grooves 322 that extend partially into, but not completely through, anodized metal sheet 123/154 318. In one embodiment, it is critical that the bottom anodized surface 319B of the sheet anodized metal 318 is not penetrated, so that anodized metal sheet 318 protects the underlying emitter structures. In this way, the depth of the grooves is precisely controlled to end up in the bottom oxide layer of the anodized Al sheet without cutting it completely. In one embodiment, laser ablation is performed mask-free; however, in other embodiments, a mask layer is formed on a portion of the anodized metal sheet 318 prior to laser ablation, and is removed subsequent to laser ablation.
    [0066] [0066] In one embodiment, the approach described in association with Figures 3A to 3C further involves, before adhering the anodized metal sheet 318 to the alternating N-type and P-type semiconductor regions 304 and 306, forming a reflection or absorption film of laser onto the background anodized surface 319B of anodized metal sheet 318. In one such embodiment, laser ablation involves the use of an infrared (IR) laser and formation of the laser reflection or absorption film involves forming a magenta film . More generally, it should be considered that the modalities involve the use of a film color that is designated according to the laser being used. In such an approach, the film color is selected to target reflection or ablation. In the specific modality described, the use of a magenta film means that it absorbs green and reflects blue and red. In one embodiment, a top film that is transparent to laser light is applied to the top surface of the anodized metal sheet. However, a reflective film is applied to the bottom surface of the anodized sheet metal. In another embodiment, the bottom surface is a dry anodized aluminum oxide layer that can absorb approximately 85% or more of a laser pulse.
    [0067] [0067] Again with reference to Figure 3C, a laser is used to finally pattern the anodized Al sheet by forming grooves that follow an interdigitated pattern, which can be parallel or 124/154 perpendicular to the Al pattern. particles. The illustration above demonstrates a general approach and can be directly applicable to parallel grooving. In another embodiment, the insulating surfaces of an anodized Al sheet may feature a benefit within the two raw metal (M2) approaches, ie, for perpendicular grooving, to contact only fingers of a chosen polarity. In such an embodiment, the anodic aluminum oxide layer at the bottom of the sheet prevents tapping between fingers of opposite polarities and the electrical contacts are fabricated from solder points only.
    [0068] [0068] Figure 5 illustrates cross-sectional views of various stages in the manufacture of a solar cell with the use of sheet-based metallization, according to another embodiment of the present disclosure. Referring to part (a) of Figure 5, an anodized aluminum foil 518 is fitted to substrate 500 which has a plurality of metallic seed particle regions 514 disposed therein. With reference to part (b) of Figure 5, laser welding is performed to generate solder points 520 that adhere sheet 518 to the metallic seed particle region 514. With reference to part (c) of Figure 5, the formation of Laser patterning is performed to provide laser grooves 522. In one embodiment, the pattern of the grooves is perpendicular to the pattern of metallic seed particle regions 514. In one embodiment, laser ablation is stopped on an anodized bottom surface of the sheet metallic 518.
    [0069] [0069] The modalities described here can be used to manufacture solar cells. In some embodiments, referring to Figures 1E and 3C, a solar cell includes a plurality of alternating N-type (104 or 304) and P-type (106 or 306) semiconductor regions disposed above a substrate 100 or
    [0070] [0070] In yet another embodiment, the substrate is a monocrystalline silicon substrate, and the alternating semiconductor regions type N and type P are formed in the monocrystalline silicon substrate. In a first example, Figure 6A illustrates a cross-sectional view of a portion of a solar cell having sheet-based contact structures formed in emitting regions formed in a substrate, in accordance with an embodiment of the present disclosure. Referring to Figure 6A, a solar cell includes a plurality of alternating N-type 604 and P-type 606 semiconductor regions disposed on a substrate 600. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metallic seed material regions 614 that provide a metallic seed material region disposed in each of the 126/154 type alternating semiconductor regions
    [0071] [0071] In a second example, Figure 6B illustrates a cross-sectional view of a portion of a solar cell that has anodized sheet-based contact structures formed in the emitting regions formed on a substrate, according to an embodiment of the present revelation. Referring to Figure 6B, a solar cell includes a plurality of alternating N-type 654 and P-type 656 semiconductor regions disposed on a substrate 650. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metallic seed material regions 664 that provide a region of metallic seed particle material disposed in each of the alternating N-type and P-type semiconductor regions. A metallic sheet 668 is disposed in the plurality of regions of metallic starting particle material 664. Foil 668 has anodized portions 669 that isolate metallic regions of foil 668 that correspond to alternating N-type and P-type semiconductor regions 664 and 666, respectively.
    [0072] [0072] In another aspect of the present disclosure, other embodiments are provided that build upon the concepts described in association with the exemplary embodiments above. As a more general consideration, back-contact solar cells generally require metal with a two-polarity pattern on the back of the solar cell. When pre-patterned metal is not available for reasons of cost, complexity, or efficiency, processing the low-cost materials of a metallic blanket often favors laser-based patterning approaches.
    [0073] [0073] For cells with high efficiency, patterned metal on the back of the cell generally has two requirements: (1) complete isolation from the metal and (2) damage-free processing. For mass production, the process may also need to be highly productive, such as a productivity greater than 500 inserts per hour. For complex patterns, using a laser to pattern a thick (eg, greater than 1 micron) or highly reflective (eg, aluminum) metal over silicon can pose a substantial manufacturing productivity problem. Productivity issues can arise as the energy required to ablate a coarse and/or highly reflective metal at a high rate requires a laser energy that is above the damage threshold of an underlying emitter (eg greater than 1 J/cm2). Due to the need to have the metal completely insulated and due to the variation in metal thickness and laser energy, excess etching is often implemented to standardize the metal. In particular, there appears to be no single, high-throughput/low-cost laser energy window available to completely remove the metal and not expose the emitter to a harmful laser beam.
    [0074] [0074] In accordance with the embodiments of the present disclosure, various approaches to metal patterning are described. Furthermore, it should be considered that, due to the interaction of the standardization process with the metal consolidation process, it is important to also consider consolidation approaches to consolidate a first layer or initial particle metallic layer (M1) to a layer metallic top as a sheet (M2). As described in more detail below, some consolidation approaches allow for multiple standardization options.
    [0075] [0075] In one embodiment, different adhesion strengths between the sheet (M2) consolidated to a thin metal of vapor deposited particles (M1) and, consequently, to the underlying tablet of the device, 128/154 are achieved depending on the consolidation method . Also, different types of failure modes are observed during adhesion testing. For laser consolidation, adhesion may depend on laser fluency (energy per focused area). At lower fluences, the adhesion between M1 and M2 becomes very weak and M2 separates easily. As laser fluence increases, adhesion through the solder between the sheet and the underlying layer of particles M1 becomes strong enough to tear the sheet during the adhesion test. When the laser fluence becomes even higher, the underlying M1 layer is affected and the insert consolidation between the device and the M1 is broken before the sheet is torn in a peel test. To take advantage of such different tear modes, in one modality, a spatially modeled laser beam is used during the laser consolidation process. The laser beam can have higher intensity (tear range M1) on the outside and lower intensity (tear range M2) on the inside, so that after soldering, the sheet (M2) can be torn along. of M1, leaving the M2/M1 region with the solder intact.
    [0076] [0076] In another aspect, where wet chemical corrosives are used to complete the insulation as a result of a groove, the M1 can be exposed to the corrosive for long periods. During this time, undesirable etching can occur, or chemistry can be trapped between M1 and M2 if M1 and M2 are not fully consolidated. In both scenarios, if the aluminum foil is consolidated to the metallic starting particle layer using a non-continuous consolidation method along the metal fingers (for example, low density consolidations, such as one consolidation every millimeters) , the etching solution may penetrate the metal starting sheet/particle interface and induce unwanted etching of the M1 fingers and/or attack the M1/M2 consolidations, resulting in poor device performance. Consolidation approaches can include laser welding, local thermocompression, soft welding and ultrasonic consolidation. As such, not all consolidation methods are compatible with gravure-based patterning, and in particular any low-density consolidation approaches such as laser welding can be particularly challenging.
    [0077] [0077] In one embodiment, the approaches described can be implemented to solve the problems described above associated with wet chemical corrosives, protecting the M1 layer against chemical attack and allowing the use of standardization processes based on etching. strong water. Modalities may include the use of laser welding as a consolidation method, and laser grooving followed by chemical etching as a patterning method, but the concepts may be applicable to other non-linear consolidation methods and patterning methods to chemical corrosion etching base.
    [0078] [0078] In such a first embodiment, a protective blanket layer is deposited on the substrate after deposition of the initial metallic particle or on the sheet before the laser welding process. The choice of material and layer thickness ensure that laser welding can be achieved through the protective layer. The material can be resistant to chemical corrosion etching treatment (eg KOH solution). Examples of suitable materials include, but are not limited to, thin adhesives, silicones, polymers or dielectrics. In a second such embodiment, a thin cap layer (eg, approximately 100 nanometers in thickness) is deposited on top of a metallic initial particle layer. The thin cap layer is composed of a different metal (eg Ni) and is resistant to chemical etching solution. In a specific modality, the thin cap layer is compatible with a laser welding process between M1 and M2. In such a third modality, fingers of an etch-resistant material (similar to the first modality) are printed between the fingers of the M1 and a heat treatment is applied, before or after laser welding, to ensure continuous adhesion between the fingers. protectors and 130/154 the M2 sheet. In a specific modality, the heat generated by the laser process is finally used to consolidate the fingers of protective material to the M2 layer. The interface between the sheet and the fingers acts as a barrier against the etching solution. The material can be thin and/or soft enough not to affect sheet fit and the laser welding process (eg intimate contact between M1/M2 is required).
    [0079] [0079] In a first exemplary process flow, an etching and etching approach involves the deposition of M1 (eg, deposition of a conductive layer of particles capable of consolidating with M2) on the device side of the cell solar. An M2 layer is applied to the M1/cell and maintains adequate contact for consolidation. An energy for consolidation, eg thermocompression or laser energy (eg long pulse duration (greater than 100 microseconds), is applied to locally heat M2 and consolidate M1 and M2. A groove is then formed mechanically or by another laser process (eg shorter pulse duration, less than approximately 1 microsecond) to provide a deep groove (eg greater than approximately 80% of sheet thickness) and trim the sheet from the sheet applicator. conductive regions is then achieved, for example, by applying etching means to the structure and etching selectively to the remaining portion of the M2. pre-patterned is selected to provide etch resistance to etching media, for example as etch resistant Ni metal with KOH Possible M2 materials include, but not are limited to aluminum, nickel, copper, titanium, chromium or multilayer combinations thereof. With an M1 aluminum layer, the recording media can include an alkaline chemistry such as potassium hydroxide or acidic chemistry such as a phosphoric acid or a mixture of phosphoric and nitric acids. The etching media is then thoroughly rinsed 131/154 from the tablet to complete the etching reaction and to avoid leaving chemical residues on the tablet. Horizontal spray rinses and/or sonic agitation can be used to completely remove tablet chemistry.
    [0080] [0080] In a second exemplifying process stream, a dual step patterning is used based on high power laser grooving added to low power laser insulation. The method first involves deposition of M1 (eg a conductive layer of particles suitable for laser soldering with M2) on the device side of the solar cell and patterning the deposited M1 layer. An M2 layer is then applied to the M1/cell and maintains direct contact suitable for laser welding. A highly energetic beam (eg laser or long pulse duration electron beam (greater than approximately 100 microseconds) is applied to locally heat M2, and for consolidation of M1 and M2. An additional laser (eg with shorter pulse duration, less than approximately 1 microsecond) is applied to provide a deep groove (eg greater than approximately 80% of the sheet thickness) and to trim the sheet from the sheet applicator. A second low power laser is , then applied along the laser groove to isolate the remaining M2.
    [0081] [0081] It should be considered that furrowing can be achieved through other approaches. For example, in another modality, instead of using a laser process, the grooving described above is formed with a mechanical process such as, but not limited to, an array of hard-tipped cutting tools dragged along the surface, semi-cut ( kissing cutting), CNC machine milling (computer numerical control), ionic milling or other cutting-type mechanism.
    [0082] [0082] It should be considered that the remaining metal can be removed through other approaches. For example, in another embodiment, as a result of ridge formation, the remaining metal is removed through the use of electricity, as with high currents, to burn the remaining metal 132/154 through resistive heating. In another embodiment, as a result of groove formation, the remaining metal is removed by means of very mild/low-throughput laser ablation. In another modality, as a result of the formation of grooves, the remaining metal is removed by means of another etching, such as plasma etching or etching by ionic backbombing. In another embodiment, as a result of groove formation, the remaining metal is removed by gripping or adhering to the region of metal to be removed and then "tearing" the gripped or adhered section.
    [0083] [0083] In a first specific modality of the tearing approach for removing the remaining metal, two parallel grooves are formed, leaving a metal strip to be torn, and the strip has a width approximately in the range of 100 to 500 microns. In a second specific embodiment, the groove lines are extended outside the solar cell to be used as tear initiation points for the subsequent tearing procedure. In a third specific modality, prior to grooving, an M1/M2 consolidation method is used, for example laser spot (or line) welding, thermocompression or other consolidation, which provides stronger adhesion than resistance to shearing of the M2 sheet which is finally torn. In a fourth specific modality, a laser beam shape of a laser groove, or laser consolidation laser, is used to modify the mechanical properties of the metal, for example, by adjusting the beam profile to adapt to a cooling profile and modifying the grain structure based on time and temperature. In this way, a post-groove isolation process is facilitated. In such an embodiment, a Gaussian beam is distorted in shape to invert the peak so that the edge profile has higher energy and is used to form a line weld. Stronger local heating at the consolidation edge causes greater stress and changes the cooling profile, and the weld material edge has a lower elastic limit than volume, or is 133/154 less flexible. In this case, during a tearing process, the interface is the first to fail. In each of the above four embodiments, the metallic starting particle layer can be patterned before grooving, or patterned after grooving, preferably in conjunction with the post-grooving insulation described above.
    [0084] [0084] In other embodiments, the M1 layer is protected from corrosives through the use of a capping layer, such as Ni, polymer, oxide, or thin adhesive deposited on M1, or M2, with a thickness or composition compatible with the process of welding (eg less than approximately 10 microns per weld through a polymer). In other embodiments, consolidation is achieved with a suitably high density (eg 100% as viewed from above) to protect against penetration of a corrosive into void spaces and to avoid excessive etching of the M1. Consolidation can be performed through integration with volume M2 (eg linear welding, thermocompression consolidation).
    [0085] [0085] Although certain materials are specifically described above with reference to Figures 1A to 1E, 3A to 3C, 56A and 6B and other described embodiments, some materials can be easily substituted for others with other such embodiments remaining within the spirit and scope of the modalities of the present disclosure. For example, in one embodiment, a substrate of a different material, such as a Group III-V material substrate, can be used in place of a silicon substrate. In another embodiment, the approaches described above may be applicable to different manufacture of solar cells. For example, light-emitting diode (LED) manufacturing can benefit from the approaches described here.
    [0086] [0086] Thereby, approaches to sheet-based metallization of solar cells and the resulting solar cells have been disclosed.
    [0087] [0087] Although specific embodiments have been described above, these embodiments are not intended to limit the scope of the present disclosure, even 134/154 when only a single embodiment is described with respect to a particular feature. Examples of features provided in the disclosure are intended to be illustrative, rather than restrictive, unless otherwise indicated. The above description is intended to cover such alternatives, modifications and equivalents as will be apparent to one of skill in the art having the benefit of the present disclosure.
    [0088] [0088] The scope of the present disclosure includes any feature or combination of features described herein (whether implicitly or explicitly), or any generalization thereof, whether or not it mitigates any of the problems addressed in the present invention. Accordingly, new claims may be formulated during the process of this order (or an order claiming priority thereto) for any such combination of features. In particular, with reference to the appended claims, the remedies of the dependent claims may be combined with those of the independent claims, and the remedies of the respective independent claims may be combined in any suitable manner and not just in the specific combinations enumerated in the appended claims.
    [0089] [0089] In one embodiment, a method of manufacturing a solar cell includes forming a plurality of alternating N-type and P-type semiconductor regions within or above a substrate. The method also includes adhering a foil to the alternating N-type and P-type semiconductor regions. The method also includes performing laser ablation through only a portion of the foil at regions corresponding to points between the alternating N-type and P-type semiconductor regions. P. The method also includes, subsequent to laser ablation, isolating the remaining foil regions corresponding to the alternating N-type and P-type semiconductor regions.
    [0090] [0090] In one embodiment, the isolation of the remaining foil regions includes anodizing the remaining foil.
    [0091] [0091] In one embodiment, isolating the remaining foil regions includes etching the remaining foil.
    [0092] [0092] In one embodiment, the method also includes, prior to adhering to the metallic sheet, forming a plurality of regions of metallic seed material to provide a region of metallic seed material in each of the alternate semiconductor regions type N and P-type, whereby adhering the foil to the alternating semiconductor regions of the N-type and the P-type comprises adhering the foil to the plurality of regions of metallic starting particle material.
    [0093] [0093] In one embodiment, the method also includes, prior to adhering the metal foil to the plurality of regions of metallic starting particle material, forming an insulating layer in the plurality of regions of metallic starting particle material, whereby the adhesion of the foil metallic to the plurality of regions of metallic starting particle material comprises penetrating the regions of the insulating layer.
    [0094] [0094] In one embodiment, adhering the metallic sheet to the plurality of regions of metallic initial particle material comprises using a technique selected from the group consisting of a laser welding process, a thermal compression process, and an ultrasonic consolidation process .
    [0095] [0095] In one embodiment, forming the plurality of regions of metallic initial particle material comprises forming regions of aluminum, each having a thickness approximately in the range of 0.3 to 20 microns and comprising aluminum in an amount greater than approximately 97 % and silicon in an amount approximately in the range of 0-2%, whereby the adhesion of the foil comprises adhering an aluminum foil having a thickness approximately in the range of 5-100 microns, and by isolating the remaining foil regions to comprise anodize the aluminum sheet by oxidizing the exposed surfaces of the aluminum sheet to a depth approximately in the range of 1-20 microns.
    [0096] [0096] In one embodiment, laser ablation through only the sheet metal portion comprises laser ablation at a sheet metal thickness approximately in the range of 80-99% of an entire sheet metal thickness.
    [0097] [0097] In one embodiment, forming the plurality of alternating N-type and P-type semiconductor regions comprises forming the alternating N-type and P-type semiconductor regions in a polycrystalline silicon layer formed above the substrate, and the method also includes forming a trench between each of the alternating N-type and P-type semiconductor regions, the trenches extending partially into the substrate.
    [0098] [0098] In one embodiment, the substrate is a monocrystalline silicon substrate and the formation of the plurality of alternating N-type and P-type semiconductor regions comprises forming the alternating N-type and P-type semiconductor regions on the monocrystalline silicon substrate.
    [0099] [0099] In one embodiment, the method also further includes, prior to laser ablation, forming a mask layer on at least a portion of the foil.
    [0100] [0100] In one embodiment, a method of fabricating a solar cell includes forming a plurality of alternating N-type and P-type semiconductor regions within or above a substrate. The method also includes adhering an anodized sheet metal to the alternating N-type and P-type semiconductor regions, the anodized sheet metal having a top anodized surface and a bottom anodized surface with a metal portion between them, with the adhesion of the sheet metal anodized to alternate semiconductor regions of type N and type P comprises penetrating the regions of the anodized bottom surface of the anodized metal sheet. The method also includes performing laser ablation through the top anodized surface and metallic portion of the anodized sheet metal in regions corresponding to points between the alternating N-type and P-type semiconductor regions, with 137/154 laser ablation terminating at the anodized bottom surface of the anodized sheet metal isolating the remaining sheet metal regions corresponding to the alternating type N and type P semiconductor regions.
    [0101] [0101] In one embodiment, the method also includes, prior to adhering the anodized metal sheet, forming a plurality of regions of metallic seed material to provide a region of metallic seed material in each of the alternating N-type semiconductor regions and P-type, wherein adhering the anodized metal sheet to the alternating N-type and P-type semiconductor regions comprises adhering the anodized metal sheet to the plurality of regions of metallic starting particle material.
    [0102] [0102] In one embodiment, the method also includes, prior to adhering the anodized metal sheet to the plurality of regions of metallic starting particle material, forming an insulating layer in the plurality of regions of metallic starting particle material, whereby the adhesion of the metallic sheet anodized to the plurality of regions of metallic starting particle material comprises penetrating the regions of the insulating layer.
    [0103] [0103] In one embodiment, adhering the anodized metallic sheet to the plurality of regions of metallic initial particle material comprises the use of a technique selected from the group consisting of a laser welding process, a thermal compression process, and a process of ultrasonic consolidation.
    [0104] [0104] In one embodiment, forming the plurality of regions of metallic starting particle material comprises forming regions of aluminum, each having a thickness approximately in the range of 0.3 to 20 microns and comprising aluminum in an amount greater than approximately 97 % and silicon in an amount approximately in the range of 0-2%, the adhesion of the anodized metal sheet comprising adhering an anodized aluminum sheet having a total thickness approximately in the range of 5-100 microns with the top anodized surface and the bottom anodized surface, 138/154 each contributing a thickness approximately in the range of 1-20 microns.
    [0105] [0105] In one embodiment, the method also includes, before adhering the anodized sheet metal to the alternating N-type and P-type semiconductor regions, forming a laser reflection or absorption film on the bottom anodized surface of the anodized sheet metal.
    [0106] [0106] In one embodiment, forming the plurality of alternating N-type and P-type semiconductor regions comprises forming the alternating N-type and P-type semiconductor regions in a polycrystalline silicon layer formed above the substrate, and the method also includes forming a trench between each of the alternating N-type and P-type semiconductor regions, the trenches extending partially into the substrate.
    [0107] [0107] In one embodiment, the substrate is a monocrystalline silicon substrate and the formation of the plurality of alternating N-type and P-type semiconductor regions comprises forming the alternating N-type and P-type semiconductor regions on the monocrystalline silicon substrate.
    [0108] [0108] In one embodiment, the method also includes, prior to laser ablation, forming a mask layer on a portion of the anodized metal sheet, and subsequent to laser ablation, removing the mask layer.
    [0109] [0109] In one embodiment, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions are disposed within or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions, the conductive contact structure including a plurality of metallic seed material regions providing a region of metallic seed particle material disposed at each of the alternating N-type and P-type semiconductor regions, and a metallic sheet disposed in the plurality of regions of metallic starting particle material, the metallic sheet having anodized portions that insulate the metal regions of the metallic sheet corresponding to the alternating type N and type P semiconductor regions.
    [0110] [0110] In one embodiment, all exposed surfaces of the sheet metal are anodized.
    140/154
    权利要求:
    Claims (22)
    [1]
    1. "SOLAR CELL MANUFACTURING METHOD", the method being characterized by comprising forming a plurality of alternating N-type and P-type semiconductor regions within or above a substrate; adhering a metallic sheet to the alternating N-type and P-type semiconductor regions; perform laser ablation through only a portion of the metallic sheet in regions that correspond to points between the alternating type N and type P semiconductor regions; and subsequent to laser ablation, isolating the remaining foil regions corresponding to the alternating N-type and P-type semiconductor regions.
    [2]
    2. "METHOD", according to claim 1, characterized in that the isolation of the remaining metallic foil regions comprises anodizing the remaining metallic foil.
    [3]
    3. "METHOD", according to claim 1, characterized in that the isolation of the remaining metallic foil regions comprises cauterizing the remaining metallic foil.
    [4]
    4. "METHOD", according to claim 1, further comprising, before adhering the metallic sheet, forming a plurality of regions of metallic seed material to provide a region of metallic seed material in each of the regions alternating N-type and P-type semiconductors, whereby adhering the foil to the alternating N-type and P-type semiconductor regions comprises adhering the foil to the plurality of regions of metallic starting particle material.
    [5]
    5. "METHOD", according to claim 4, characterized in that it further comprises, before adhering the metallic sheet to the plurality of regions of metallic initial particle material, forming an insulating layer in the plurality of regions of metallic initial particle material, being that adhering the foil to the plurality of regions of metallic starting particle material comprises penetrating the regions of the insulating layer.
    141/154
    [6]
    6. "METHOD", according to claim 4, characterized by the adhesion of the metallic sheet to the plurality of regions of metallic initial particle material comprising the use of a technique selected from the group consisting of a laser welding process, a process thermal compression and an ultrasonic consolidation process.
    [7]
    7. "METHOD", according to claim 4, characterized in that forming the plurality of regions of metallic initial particle material comprises forming regions of aluminum, each having a thickness approximately in the range of 0.3 to 20 microns and comprising aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%, the metal foil adhesion comprising adhering an aluminum foil having a thickness approximately in the range of 5-100 microns, and fur isolating the remaining foil regions comprises anodizing the aluminum foil by oxidizing the exposed surfaces of the aluminum foil to a depth approximately in the range of 1-20 microns.
    [8]
    8. "METHOD", according to claim 1, characterized in that laser ablation through only the portion of the sheet metal comprises laser ablation of a sheet metal thickness approximately in the range of 80-99% of an entire sheet thickness metallic.
    [9]
    9. "METHOD", according to claim 1, characterized in that the formation of the plurality of alternating N-type and P-type semiconductor regions comprises forming alternating N-type and P-type semiconductor regions in a polycrystalline silicon layer formed above the substrate, wherein the method further comprises the formation of a trench between each of the alternating N-type and P-type semiconductor regions, the trenches partially extending into the substrate.
    [10]
    10. "METHOD", according to claim 1, characterized in that the substrate is a monocrystalline silicon substrate and by the formation of the plurality of 142/154 alternating N-type and P-type semiconductor regions comprise forming the alternating N-type and P-type semiconductor regions on the monocrystalline silicon substrate.
    [11]
    11. "METHOD", according to claim 1, characterized in that it further comprises, prior to laser ablation, forming a mask layer on at least a portion of the metal sheet.
    [12]
    12. "SOLAR CELL MANUFACTURING METHOD", characterized by forming a plurality of alternating type N and type P semiconductor regions inside or above a substrate; adhering an anodized metal sheet to the alternating semiconductor regions of the N-type and the P-type, the anodized metal sheet having a top anodized surface and a bottom anodized surface with a metal portion between them, and the adhesion of the anodized metal sheet to the alternating N-type and P-type semiconductor regions comprise penetrating the regions of the bottom anodized surface of the anodized metal sheet; and perform laser ablation through the top anodized surface and the metallic portion of the anodized metal sheet in regions corresponding to points between the alternating N-type and P-type semiconductor regions, with laser ablation terminating at the bottom anodized surface of the sheet anodized metallic isolating the remaining metallic foil regions corresponding to the alternating semiconductor regions of type N and type P.
    [13]
    13. "METHOD", according to claim 12, further comprising, prior to adhering the anodized metal sheet, forming a plurality of regions of metallic seed material to provide a region of metallic seed material in each one of the alternating N-type and P-type semiconductor regions, whereby adhering the anodized metal sheet to the alternating N-type and P-type semiconductor regions comprises adhering the anodized metal sheet to the plurality of regions of metallic starting particle material.
    [14]
    14. "METHOD", according to claim 13, characterized in that it further comprises, before adhering to the anodized metallic sheet to the plurality of regions 143/154 of metallic initial particle material, the formation of an insulating layer in the plurality of material regions of metallic starting particle material, whereby adhering the anodized metal sheet to the plurality of regions of metallic starting particle material comprises penetrating the regions of the insulating layer.
    [15]
    15. "METHOD", according to claim 13, characterized in that the anodized metallic sheet adheres to the plurality of regions of metallic initial particle material comprising the use of a technique selected from the group consisting of a laser welding process, a thermal compression process and an ultrasonic consolidation process.
    [16]
    16. "METHOD", according to claim 13, characterized in that forming the plurality of regions of metallic initial particle material comprises forming regions of aluminum, each having a thickness approximately in the range of 0.3 to 20 microns and comprising aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%, the adhesion of the anodized metal sheet comprising adhering an anodized aluminum sheet having a total thickness approximately in the range of 5-100 microns with the top anodized surface and the bottom anodized surface each contributing a thickness approximately in the range of 1-20 microns.
    [17]
    17. "METHOD", according to claim 12, characterized in that it further comprises, before adhering the anodized metal sheet to the alternating N-type and P-type semiconductor regions, the formation of a laser reflection or absorption film on the bottom anodized surface of anodized metallic sheet.
    [18]
    18. "METHOD", according to claim 12, characterized in that the formation of the plurality of alternating N-type and P-type semiconductor regions comprises forming alternating N-type and P-type semiconductor regions in a polycrystalline silicon layer formed above the substrate, wherein the method further comprises forming a trench between each of the alternating N-type and P-type 144/154 semiconductor regions, the trenches extending partially into the substrate.
    [19]
    19. "METHOD", according to claim 12, characterized in that the substrate is a monocrystalline silicon substrate and the formation of the plurality of alternating N-type and P-type semiconductor regions comprises forming the alternating N-type and P-type semiconductor regions on the substrate. monocrystalline silicon.
    [20]
    20. "METHOD", according to claim 12, characterized in that it further comprises, before laser ablation, the formation of a mask layer on a portion of the anodized metal sheet; and subsequent to laser ablation, removing the mask layer.
    [21]
    21. "SOLAR CELL", characterized in that it comprises a substrate; a plurality of alternating N-type and P-type semiconductor regions disposed within or above the substrate; and a conductive contact structure disposed above the plurality of alternating N-type and P-type semiconductor regions, the conductive contact structure comprising, a plurality of metallic seed material regions providing an disposed metallic seed material region in each of the alternating type N and type P semiconductor regions; and a sheet metal disposed in the plurality of regions of metallic starting particle material, the sheet metal having anodized portions that isolate the metal regions of the sheet metal corresponding to the alternating semiconductor regions of N-type and P-type.
    [22]
    22. "SOLAR CELL" according to claim 21, characterized in that all exposed surfaces of the metal sheet are anodized.
    145/154
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    法律状态:
    2020-06-02| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|
    2021-08-03| B350| Update of information on the portal [chapter 15.35 patent gazette]|
    2022-02-15| B07A| Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]|
    优先权:
    申请号 | 申请日 | 专利标题
    US14/229,716|US9231129B2|2014-03-28|2014-03-28|Foil-based metallization of solar cells|
    US14/229.716|2014-03-28|
    PCT/US2015/022336|WO2015148573A1|2014-03-28|2015-03-24|Foil-based metallization of solar cells|
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